ManufacturerPackagingSeriesPart StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
Diode Type
Voltage - DC Reverse ...
Current - Average ...
Voltage - Forward ...
Speed
Reverse Recovery ...
Current - Reverse ...
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package ...
Operating Temperature ...
CD4148WP
CD4148WP
3500CrownpoDIODE GEN PURP 75V 150MA 1206Tape & Reel (TR)-ActiveStandard75V150mA1.25V @ 150mASmall Signal =< 200mA (Io), Any Speed4ns1µA @ 75V2pF @ 0V, 1MHzSurface Mount1206 (3216 Metric)1206-65°C ~ 150°C
BAT85SMD
BAT85SMD
52Vishay Semiconductor Diodes DivisionDIODE SCHOTTKY 30V 200MA SOD-80Tape & Reel (TR)-ActiveSchottky30V200mA (DC)800mV @ 100mASmall Signal =< 200mA (Io), Any Speed5ns2µA @ 25V10pF @ 1V, 1MHzSurface MountSOD-80SOD-80-65°C ~ 150°C
SS34A
SS34A
270Fairchild/ON SemiconductorDIODE SCHOTTKY 40V 3A SMATape & Reel (TR)-ActiveSchottky40V3A450mV @ 3AFast Recovery =< 500ns, > 200mA (Io)-300µA @ 40V-Surface MountDO-214AC, SMASMA-55°C ~ 150°C
1N4007-M7
1N4007-M7
29Diodes IncorporatedDIODE GEN PURP 1KV 1A SMATape & Reel (TR)-ActiveStandard1000V (1kV)1A1V @ 1AStandard Recovery >500ns, > 200mA (Io)-5µA @ 1000V8pF @ 4V, 1MHzSurface MountDO-214AC, SMASMA-65°C ~ 150°C
10A10
10A10
Leadtime
2-3 weeks
RectronDIODE GEN PURP 1KV 10A R6Tape & Reel (TR)-ActiveStandard1000V (1kV)10A1V @ 10AStandard Recovery >500ns, > 200mA (Io)-10µA @ 1000V80pF @ 4V, 1MHzThrough HoleR6, AxialR-6-65°C ~ 150°C
1N5408-Cut
1N5408-Cut
Leadtime
2-3 weeks
Fairchild/ON SemiconductorDIODE GEN PURP 1KV 3A DO201ADBulk-ObsoleteStandard1000V (1kV)3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)-10µA @ 1000V-Through HoleDO-201AA, DO-27, AxialDO-201AD-65°C ~ 170°C
1N5399-Cut
1N5399-Cut
Leadtime
2-3 weeks
Fairchild/ON SemiconductorDIODE GEN PURP 1KV 1.5A DO15Bulk-ObsoleteStandard1000V (1kV)1.5A1.4V @ 1.5AStandard Recovery >500ns, > 200mA (Io)-5µA @ 1000V25pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-15-55°C ~ 150°C
IDW40G65C5BXKSA2
IDW40G65C5BXKSA2
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 40A TO247-3-thinQ!™ActiveSilicon Carbide Schottky650V20A (DC)1.7V @ 20ANo Recovery Time > 500mA (Io)0ns210µA @ 650V590pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDW32G65C5BXKSA2
IDW32G65C5BXKSA2
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 32A TO247-3-thinQ!™ActiveSilicon Carbide Schottky650V16A (DC)1.7V @ 16ANo Recovery Time > 500mA (Io)0ns200µA @ 650V470pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDW24G65C5BXKSA2
IDW24G65C5BXKSA2
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 24A TO247-3-thinQ!™ActiveSilicon Carbide Schottky650V12A (DC)1.7V @ 12ANo Recovery Time > 500mA (Io)0ns190µA @ 650V360pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDW20G65C5BXKSA2
IDW20G65C5BXKSA2
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 20A TO247-3-thinQ!™ActiveSilicon Carbide Schottky650V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns180µA @ 650V300pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDK09G65C5XTMA2
IDK09G65C5XTMA2
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 9A TO263-2-thinQ!™ActiveSilicon Carbide Schottky650V9A (DC)1.8V @ 9ANo Recovery Time > 500mA (Io)0ns1.6mA @ 650V270pF @ 1V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-2-55°C ~ 175°C
IDK06G65C5XTMA2
IDK06G65C5XTMA2
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 6A TO263-2-thinQ!™ActiveSilicon Carbide Schottky650V6A (DC)1.8V @ 6ANo Recovery Time > 500mA (Io)0ns1.1mA @ 650V190pF @ 1V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-2-55°C ~ 175°C
IDK05G65C5XTMA2
IDK05G65C5XTMA2
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 5A TO263-2-thinQ!™ActiveSilicon Carbide Schottky650V5A (DC)1.8V @ 5ANo Recovery Time > 500mA (Io)0ns830µA @ 650V160pF @ 1V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-2-55°C ~ 175°C
IDK04G65C5XTMA2
IDK04G65C5XTMA2
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 4A TO263-2-thinQ!™ActiveSilicon Carbide Schottky650V4A (DC)1.8V @ 4ANo Recovery Time > 500mA (Io)0ns670µA @ 650V130pF @ 1V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-2-55°C ~ 175°C
IDK03G65C5XTMA2
IDK03G65C5XTMA2
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 3A TO263-2-thinQ!™ActiveSilicon Carbide Schottky650V3A (DC)1.8V @ 3ANo Recovery Time > 500mA (Io)0ns500µA @ 650V100pF @ 1V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-2-55°C ~ 175°C
IDK02G65C5XTMA2
IDK02G65C5XTMA2
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 2A TO263-2-thinQ!™ActiveSilicon Carbide Schottky650V2A (DC)1.8V @ 2ANo Recovery Time > 500mA (Io)0ns330µA @ 650V70pF @ 1V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABPG-TO263-2-55°C ~ 175°C
S3760
S3760
Leadtime
2-3 weeks
Microsemi CorporationDIODE GEN PURP 600V 85A DO5--ActiveStandard600V85A1.15V @ 200AStandard Recovery >500ns, > 200mA (Io)-25µA @ 600V-Stud MountDO-203AB, DO-5, StudDO-5-65°C ~ 200°C
1N3903
1N3903
Leadtime
2-3 weeks
Microsemi CorporationDIODE GEN PURP 400V 20A DO5--ActiveStandard400V20A1.4V @ 63AFast Recovery =< 500ns, > 200mA (Io)200ns50µA @ 400V150pF @ 10V, 1MHzStud MountDO-203AB, DO-5, StudDO-5-65°C ~ 150°C
IDW40G65C5XKSA1
IDW40G65C5XKSA1
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 40A TO247-3TubethinQ!™ActiveSilicon Carbide Schottky650V40A (DC)1.7V @ 40ANo Recovery Time > 500mA (Io)0ns220µA @ 650V1140pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDW30G65C5XKSA1
IDW30G65C5XKSA1
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 30A TO247-3TubethinQ!™ActiveSilicon Carbide Schottky650V30A (DC)1.7V @ 30ANo Recovery Time > 500mA (Io)0ns220µA @ 650V860pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDW20G65C5XKSA1
IDW20G65C5XKSA1
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 20A TO247-3TubethinQ!™ActiveSilicon Carbide Schottky650V20A (DC)1.7V @ 20ANo Recovery Time > 500mA (Io)0ns210µA @ 650V590pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDH20G65C5XKSA2
IDH20G65C5XKSA2
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 20A TO220-2TubethinQ!™ActiveSilicon Carbide Schottky650V20A (DC)1.7V @ 20ANo Recovery Time > 500mA (Io)0ns210µA @ 650V590pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-1-55°C ~ 175°C
IDW16G65C5XKSA1
IDW16G65C5XKSA1
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 16A TO247-3TubethinQ!™ActiveSilicon Carbide Schottky650V16A (DC)1.7V @ 16ANo Recovery Time > 500mA (Io)0ns200µA @ 650V470pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
IDH16G65C5XKSA2
IDH16G65C5XKSA2
Leadtime
2-3 weeks
Infineon TechnologiesDIODE SCHOTTKY 650V 16A TO220-2TubethinQ!™ActiveSilicon Carbide Schottky650V16A (DC)1.7V @ 16ANo Recovery Time > 500mA (Io)0ns200µA @ 650V470pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-1-55°C ~ 175°C