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| Manufacturer | Infineon Technologies |
| Packaging | - |
| Series | thinQ!™ |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) | 6A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 6A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 1.1mA @ 650V |
| Capacitance @ Vr, F | 190pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Standard Package |
DIODE GEN PURP 200V 1A DO204AL
DIODE GEN PURP 125V 200MA LL34
DIODE GEN PURP 80V LEADLESS
DIODE GEN PURP 600V 20A LPDS
DIODE RECT 3A 400V 50NS DO214AB
DIODE GEN PURP 600V 1A DO204AL
DIODE GEN PURP 600V 4A D2PAK
DIODE SCHOTTKY 20A 80V ITO220AB
DIODE GEN PURP 75V 2A DO35
DIODE GEN PURP 200V 1A AXIAL
DIODE GEN PURP 600V 600MA AXIAL
DIODE SCHOTTKY 30V 100MA 0402
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