ManufacturerPackagingSeriesPart StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsVgs (Max)FET FeaturePower Dissipation (Max)Rds On (Max) @ Id, VgsOperating TemperatureMounting TypeSupplier Device PackagePackage / Case
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
Technology
Drain to Source Voltage ...
Current - Continuous ...
Drive Voltage (Max ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Vgs (Max)
FET Feature
Power Dissipation ...
Rds On (Max) @ Id, ...
Operating Temperature ...
Mounting Type
Supplier Device Package ...
Package / Case
IRF520-1
IRF520
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 100V 9.2A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)100V9.2A (Tc)-4V @ 250µA16nC @ 10V360pF @ 25V--60W (Tc)270 mOhm @ 5.5A, 10V-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
IRFZ20
IRFZ20
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 50V 15A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)50V15A (Tc)-4V @ 250µA17nC @ 10V850pF @ 25V--40W (Tc)100 mOhm @ 10A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRFD9210
IRFD9210
Leadtime
2-3 weeks		Vishay SiliconixMOSFET P-CH 200V 0.4A 4-DIPTube-ObsoleteP-ChannelMOSFET (Metal Oxide)200V400mA (Ta)-4V @ 250µA8.9nC @ 10V170pF @ 25V--1W (Ta)3 Ohm @ 240mA, 10V-55°C ~ 150°C (TJ)Through Hole4-DIP, Hexdip, HVMDIP4-DIP (0.300", 7.62mm)
IRF9620
IRF9620
Leadtime
2-3 weeks		Vishay SiliconixMOSFET P-CH 200V 3.5A TO-220ABTube-ObsoleteP-ChannelMOSFET (Metal Oxide)200V3.5A (Tc)-4V @ 250µA22nC @ 10V350pF @ 25V--40W (Tc)1.5 Ohm @ 1.5A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRF9530
IRF9530
Leadtime
2-3 weeks		Vishay SiliconixMOSFET P-CH 100V 12A TO-220ABTube-ObsoleteP-ChannelMOSFET (Metal Oxide)100V12A (Tc)-4V @ 250µA38nC @ 10V860pF @ 25V--88W (Tc)300 mOhm @ 7.2A, 10V-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
IRFD220
IRFD220
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 200V 800MA 4-DIPTube-ObsoleteN-ChannelMOSFET (Metal Oxide)200V800mA (Ta)-4V @ 250µA14nC @ 10V260pF @ 25V--1W (Ta)800 mOhm @ 480mA, 10V-55°C ~ 150°C (TJ)Through Hole4-DIP, Hexdip, HVMDIP4-DIP (0.300", 7.62mm)
IRF9610
IRF9610
Leadtime
2-3 weeks		Vishay SiliconixMOSFET P-CH 200V 1.8A TO-220ABTube-ObsoleteP-ChannelMOSFET (Metal Oxide)200V1.8A (Tc)-4V @ 250µA11nC @ 10V170pF @ 25V--20W (Tc)3 Ohm @ 900mA, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRF9520
IRF9520
Leadtime
2-3 weeks		Vishay SiliconixMOSFET P-CH 100V 6.8A TO-220ABTube-ObsoleteP-ChannelMOSFET (Metal Oxide)100V6.8A (Tc)-4V @ 250µA18nC @ 10V390pF @ 25V--60W (Tc)600 mOhm @ 4.1A, 10V-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
IRFD120
IRFD120
1+2.88235
Increments of 1
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 100V 1.3A 4-DIPTube-ObsoleteN-ChannelMOSFET (Metal Oxide)100V1.3A (Ta)-4V @ 250µA16nC @ 10V360pF @ 25V--1.3W (Ta)270 mOhm @ 780mA, 10V-55°C ~ 175°C (TJ)Through Hole4-DIP, Hexdip, HVMDIP4-DIP (0.300", 7.62mm)
IRF9640
IRF9640
Leadtime
2-3 weeks		Vishay SiliconixMOSFET P-CH 200V 11A TO-220ABTube-ObsoleteP-ChannelMOSFET (Metal Oxide)200V11A (Tc)-4V @ 250µA44nC @ 10V1200pF @ 25V--125W (Tc)500 mOhm @ 6.6A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRF710
IRF710
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 400V 2A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)400V2A (Tc)-4V @ 250µA17nC @ 10V170pF @ 25V--36W (Tc)3.6 Ohm @ 1.2A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRF720
IRF720
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 400V 3.3A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)400V3.3A (Tc)-4V @ 250µA20nC @ 10V410pF @ 25V--50W (Tc)1.8 Ohm @ 2A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRF830-1
IRF830
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 500V 4.5A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)500V4.5A (Tc)-4V @ 250µA38nC @ 10V610pF @ 25V--74W (Tc)1.5 Ohm @ 2.7A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRF820-1
IRF820
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 500V 2.5A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)500V2.5A (Tc)-4V @ 250µA24nC @ 10V360pF @ 25V--50W (Tc)3 Ohm @ 1.5A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRF740-1
IRF740
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 400V 10A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)400V10A (Tc)-4V @ 250µA63nC @ 10V1400pF @ 25V--125W (Tc)550 mOhm @ 6A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRF730-1
IRF730
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 400V 5.5A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)400V5.5A (Tc)-4V @ 250µA38nC @ 10V700pF @ 25V--74W (Tc)1 Ohm @ 3.3A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRF620-1
IRF620
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 200V 5.2A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)200V5.2A (Tc)-4V @ 250µA14nC @ 10V260pF @ 25V--50W (Tc)800 mOhm @ 3.1A, 10V-65°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRF530-1
IRF530
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 100V 14A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)100V14A (Tc)-4V @ 250µA26nC @ 10V670pF @ 25V--88W (Tc)160 mOhm @ 8.4A, 10V-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
IRF610
IRF610
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 200V 3.3A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)200V3.3A (Tc)-4V @ 250µA8.2nC @ 10V140pF @ 25V--36W (Tc)1.5 Ohm @ 2A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRF9630
IRF9630
Leadtime
2-3 weeks		Vishay SiliconixMOSFET P-CH 200V 6.5A TO-220ABTube-ObsoleteP-ChannelMOSFET (Metal Oxide)200V6.5A (Tc)-4V @ 250µA29nC @ 10V700pF @ 25V--74W (Tc)800 mOhm @ 3.9A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRFD9120
IRFD9120
Leadtime
2-3 weeks		Vishay SiliconixMOSFET P-CH 100V 1A 4-DIPTube-ObsoleteP-ChannelMOSFET (Metal Oxide)100V1A (Ta)-4V @ 250µA18nC @ 10V390pF @ 25V--1.3W (Ta)600 mOhm @ 600mA, 10V-55°C ~ 175°C (TJ)Through Hole4-DIP, Hexdip, HVMDIP4-DIP (0.300", 7.62mm)
IRFD9110
IRFD9110
Leadtime
2-3 weeks		Vishay SiliconixMOSFET P-CH 100V 0.7A 4-DIPTube-ObsoleteP-ChannelMOSFET (Metal Oxide)100V700mA (Ta)-4V @ 250µA8.7nC @ 10V200pF @ 25V--1.3W (Ta)1.2 Ohm @ 420mA, 10V-55°C ~ 175°C (TJ)Through Hole4-DIP, Hexdip, HVMDIP4-DIP (0.300", 7.62mm)
IRFD210
IRFD210
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 200V 600MA 4-DIPTube-ObsoleteN-ChannelMOSFET (Metal Oxide)200V600mA (Ta)-4V @ 250µA8.2nC @ 10V140pF @ 25V--1W (Ta)1.5 Ohm @ 360mA, 10V-55°C ~ 150°C (TJ)Through Hole4-DIP, Hexdip, HVMDIP4-DIP (0.300", 7.62mm)
IRFD9113
IRFD9113
Leadtime
2-3 weeks		Vishay SiliconixMOSFET P-CH 60V 600MA 4-DIPTube-ObsoleteP-ChannelMOSFET (Metal Oxide)60V600mA (Ta)--15nC @ 15V250pF @ 25V---1.6 Ohm @ 300mA, 10V-Through Hole4-DIP, Hexdip, HVMDIP4-DIP (0.300", 7.62mm)
IRFD110
IRFD110
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 100V 1A 4-DIPTube-ObsoleteN-ChannelMOSFET (Metal Oxide)100V1A (Ta)-4V @ 250µA8.3nC @ 10V180pF @ 25V--1.3W (Ta)540 mOhm @ 600mA, 10V-55°C ~ 175°C (TJ)Through Hole4-DIP, Hexdip, HVMDIP4-DIP (0.300", 7.62mm)