ManufacturerPackagingSeriesPart StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsVgs (Max)FET FeaturePower Dissipation (Max)Rds On (Max) @ Id, VgsOperating TemperatureMounting TypeSupplier Device PackagePackage / Case
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
Technology
Drain to Source Voltage ...
Current - Continuous ...
Drive Voltage (Max ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Vgs (Max)
FET Feature
Power Dissipation ...
Rds On (Max) @ Id, ...
Operating Temperature ...
Mounting Type
Supplier Device Package ...
Package / Case
IRF840-1
IRF840
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 500V 8A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)500V8A (Tc)-4V @ 250µA63nC @ 10V1300pF @ 25V--125W (Tc)850 mOhm @ 4.8A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRFD9220
IRFD9220
Leadtime
2-3 weeks		Vishay SiliconixMOSFET P-CH 200V 0.56A 4-DIPTube-ObsoleteP-ChannelMOSFET (Metal Oxide)200V560mA (Ta)-4V @ 250µA15nC @ 10V340pF @ 25V--1W (Ta)1.5 Ohm @ 340mA, 10V-55°C ~ 150°C (TJ)Through Hole4-DIP, Hexdip, HVMDIP4-DIP (0.300", 7.62mm)
IRF9510
IRF9510
Leadtime
2-3 weeks		Vishay SiliconixMOSFET P-CH 100V 4A TO-220ABTube-ObsoleteP-ChannelMOSFET (Metal Oxide)100V4A (Tc)-4V @ 250µA8.7nC @ 10V200pF @ 25V--43W (Tc)1.2 Ohm @ 2.4A, 10V-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
SIHP22N60E-GE3-Cut
SIHP22N60E-GE3
1+3.95098
10+3.55294
25+3.35843
100+2.91069
250+2.76141
Increments of 1
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 600V 21A TO220ABCut Tape (CT)EActiveN-ChannelMOSFET (Metal Oxide)600V21A (Tc)10V4V @ 250µA86nC @ 10V1920pF @ 100V±30V-227W (Tc)180 mOhm @ 11A, 10V-55°C ~ 150°C (TJ)Through Hole-TO-220-3
SIHP22N60E-GE3
SIHP22N60E-GE3
1000+2.08971
Increments of 1000
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 600V 21A TO220ABTubeEActiveN-ChannelMOSFET (Metal Oxide)600V21A (Tc)10V4V @ 250µA86nC @ 10V1920pF @ 100V±30V-227W (Tc)180 mOhm @ 11A, 10V-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
ZVN4424GTA-Cut
ZVN4424GTA
1+1.09804
10+0.985294
100+0.768137
500+0.634588
Increments of 1
Leadtime
2-3 weeks		Diodes IncorporatedMOSFET N-CH 240V 500MA SOT223Cut Tape (CT)-ActiveN-ChannelMOSFET (Metal Oxide)240V500mA (Ta)2.5V, 10V1.8V @ 1mA-200pF @ 25V±40V-2.5W (Ta)5.5 Ohm @ 500mA, 10V-55°C ~ 150°C (TJ)Surface MountSOT-223TO-261-4, TO-261AA
IRF510
IRF510
Leadtime
2-3 weeks		Vishay SiliconixMOSFET N-CH 100V 5.6A TO-220ABTube-ObsoleteN-ChannelMOSFET (Metal Oxide)100V5.6A (Tc)-4V @ 250µA8.3nC @ 10V180pF @ 25V--43W (Tc)540 mOhm @ 3.4A, 10V-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3