ManufacturerPackagingSeriesPart StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsVgs (Max)FET FeaturePower Dissipation (Max)Rds On (Max) @ Id, VgsOperating TemperatureMounting TypeSupplier Device PackagePackage / Case
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
FET Type
Technology
Drain to Source Voltage ...
Current - Continuous ...
Drive Voltage (Max ...
Vgs(th) (Max) @ Id
Gate Charge (Qg) ...
Input Capacitance ...
Vgs (Max)
FET Feature
Power Dissipation ...
Rds On (Max) @ Id, ...
Operating Temperature ...
Mounting Type
Supplier Device Package ...
Package / Case
SI4116DY-T1-GE3-Cut
SI4116DY-T1-GE3
1+1
10+0.898039
25+0.852157
100+0.699902
250+0.654235
Increments of 1
Leadtime
2-3 weeks		HZP-8Q-U6LMOSFET N-CH 25V 18A 8-SOICCut Tape CT TrenchFET®ActiveN-ChannelMOSFET Metal Oxide 25V18A Tc 2.5V, 10V1.4V @ 250µA56nC @ 10V1925pF @ 15V±12V-2.5W Ta , 5W Tc 8.6 mOhm @ 10A, 10V-55°C ~ 150°C TJ Surface Mount8-SO8-SOIC 0.154 , 3.90mm Width
UPA2821T1L-E1-AT
UPA2821T1L-E1-AT
3000+0.507843
Increments of 3000
99R8-WTT-D3HMOSFET N-CH 30V 26A 8HVSONTape & Reel TR -ActiveN-ChannelMOSFET Metal Oxide 30V26A Tc --51nC @ 10V2490pF @ 10V--1.5W Ta 3.8 mOhm @ 26A, 10V150°C TJ Surface Mount8-HWSON 3.3x3.3 8-PowerWDFN
IRF9510STRR
IRF9510STRR
Leadtime
2-3 weeks		VR3-7Y-QUMOSFET P-CH 100V 4A D2PAKTape & Reel TR -ObsoleteP-ChannelMOSFET Metal Oxide 100V4A Tc -4V @ 250µA8.7nC @ 10V200pF @ 25V--3.7W Ta , 43W Tc 1.2 Ohm @ 2.4A, 10V-55°C ~ 175°C TJ Surface MountD2PAKTO-263-3, D²Pak 2 Leads + Tab , TO-263AB
AO3160
AO3160
6000+0.0911765
Increments of 6000
Leadtime
2-3 weeks		K9T4F-8N8-KNMOSFET N-CH 600V .04A SOT23Tape & Reel TR -ActiveN-ChannelMOSFET Metal Oxide 600V40mA Ta 4.5V, 10V3.2V @ 8µA1.5nC @ 10V15pF @ 25V±20V-1.39W Ta 500 Ohm @ 16mA, 10V-55°C ~ 150°C TJ Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
SUD50P06-15L-E3
SUD50P06-15L-E3
2000+1.19515
Increments of 2000
Leadtime
2-3 weeks		JVW-XU7-LEMOSFET P-CH 60V 50A TO252Tape & Reel TR TrenchFET®ActiveP-ChannelMOSFET Metal Oxide 60V50A Tc 4.5V, 10V3V @ 250µA165nC @ 10V4950pF @ 25V±20V-3W Ta , 136W Tc 15 mOhm @ 17A, 10V-55°C ~ 175°C TJ Surface MountTO-252, D-Pak TO-252-3, DPak 2 Leads + Tab , SC-63
STW33N60M2
STW33N60M2
600+3.40137
Increments of 600
Leadtime
2-3 weeks		PT-FCA5-BEWMOSFET N-CH 600V 26A TO-247TubeMDmesh™ II PlusActiveN-ChannelMOSFET Metal Oxide 600V26A Tc 10V4V @ 250µA45.5nC @ 10V1781pF @ 100V±25V-190W Tc 125 mOhm @ 13A, 10V-55°C ~ 150°C TJ Through HoleTO-247TO-247-3
FQP6N80
FQP6N80
Leadtime
2-3 weeks		R8-YU3-7O4MOSFET N-CH 800V 5.8A TO-220TubeQFET®ObsoleteN-ChannelMOSFET Metal Oxide 800V5.8A Tc -5V @ 250µA31nC @ 10V1500pF @ 25V--158W Tc 1.95 Ohm @ 2.9A, 10V-55°C ~ 150°C TJ Through HoleTO-220-3TO-220-3
STD45N10F7-Cut
STD45N10F7
1+2.29412
10+2.06275
100+1.65765
500+1.36194
1000+1.12847
Increments of 1
11A9-5YLY-XOMOSFET N-CH 100V 45A DPAKCut Tape CT DeepGATE™, STripFET™ VIIActiveN-ChannelMOSFET Metal Oxide 100V45A Tc 10V4.5V @ 250µA25nC @ 10V1640pF @ 50V20V-60W Tc 18 mOhm @ 22.5A, 10V-55°C ~ 175°C TJ Surface MountDPAKTO-252-3, DPak 2 Leads + Tab , SC-63
EPC2024ENG
EPC2024ENG
100+7.88971
Increments of 100
Leadtime
2-3 weeks		CLK2-QO-IDOTRANS GAN 40V 60A BUMPED DIETrayeGaN®ActiveN-ChannelGaNFET Gallium Nitride 40V60A Ta -2.5V @ 19mA19nC @ 5V2100pF @ 20V---1.5 mOhm @ 37A, 5V-40°C ~ 150°C TJ Surface MountDieDie
FQU5N50CTU
FQU5N50CTU
Leadtime
2-3 weeks		MU4C-6TJE-MGMOSFET N-CH 500V 4A IPAKTubeQFET®ObsoleteN-ChannelMOSFET Metal Oxide 500V4A Tc -4V @ 250µA24nC @ 10V625pF @ 25V--2.5W Ta , 48W Tc 1.4 Ohm @ 2A, 10V-55°C ~ 150°C TJ Through HoleI-PakTO-251-3 Short Leads, IPak, TO-251AA
IPD60R950C6
IPD60R950C6
Leadtime
2-3 weeks		PF6MO-PYSM-XYUMOSFET N-CH 600V 4.4A TO252Tape & Reel TR CoolMOS™0N-ChannelMOSFET Metal Oxide 600V4.4A Tc -3.5V @ 130µA13nC @ 10V280pF @ 100V--37W Tc 950 mOhm @ 1.5A, 10V-55°C ~ 150°C TJ Surface MountPG-TO252-3TO-252-3, DPak 2 Leads + Tab , SC-63
SI2301CDS-T1-GE3-Cut
SI2301CDS-T1-GE3
1+0.382353
10+0.291176
25+0.262353
100+0.181275
250+0.152667
Increments of 1
Leadtime
2-3 weeks		EPV2H-9C43-Q5MOSFET P-CH 20V 3.1A SOT23-3Cut Tape CT TrenchFET®ActiveP-ChannelMOSFET Metal Oxide 20V3.1A Tc 2.5V, 4.5V1V @ 250µA10nC @ 4.5V405pF @ 10V±8V-860mW Ta , 1.6W Tc 112 mOhm @ 2.8A, 4.5V-55°C ~ 150°C TJ Surface MountSOT-23-3 TO-236 TO-236-3, SC-59, SOT-23-3
IPP147N12N3 G
IPP147N12N3 G
1+1.52941
10+1.36961
100+1.06784
500+0.882098
1000+0.696402
Increments of 1
Leadtime
2-3 weeks		M3A-XM5B-SOMOSFET N-CH 120V 56A TO220-3TubeOptiMOS™ActiveN-ChannelMOSFET Metal Oxide 120V56A Ta 10V4V @ 61µA49nC @ 10V3220pF @ 60V±20V-107W Tc 14.7 mOhm @ 56A, 10V-55°C ~ 175°C TJ Through HolePG-TO-220-3TO-220-3
SI5459DU-T1-GE3
SI5459DU-T1-GE3
3000+0.231363
6000+0.215402
15000+0.207431
Increments of 3000
Leadtime
2-3 weeks		U2-2KY-7XMOSFET P-CH 20V 8A CHIPFETTape & Reel TR TrenchFET®ActiveP-ChannelMOSFET Metal Oxide 20V8A Tc 2.5V, 4.5V1.4V @ 250µA26nC @ 10V665pF @ 10V±12V-3.5W Ta , 10.9W Tc 52 mOhm @ 6.7A, 4.5V-50°C ~ 150°C TJ Surface MountPowerPAK® ChipFet SinglePowerPAK® ChipFET™ Single
IXFH28N60P3
IXFH28N60P3
1+5.82353
10+5.19902
25+4.67882
100+4.26284
250+3.8469
Increments of 1
Leadtime
2-3 weeks		NCPL-VN-Z7VMOSFET N-CH 600V 28A TO247TubeHiPerFET™, Polar3™ActiveN-ChannelMOSFET Metal Oxide 600V28A Tc 10V5V @ 2.5mA50nC @ 10V3560pF @ 25V±30V-695W Tc 260 mOhm @ 14A, 10V-55°C ~ 150°C TJ Through HoleTO-247AD IXFH TO-247-3
IRF9510STRL
IRF9510STRL
Leadtime
2-3 weeks		B0LY-G51D-C5EMOSFET P-CH 100V 4A D2PAKTape & Reel TR -ObsoleteP-ChannelMOSFET Metal Oxide 100V4A Tc -4V @ 250µA8.7nC @ 10V200pF @ 25V--3.7W Ta , 43W Tc 1.2 Ohm @ 2.4A, 10V-55°C ~ 175°C TJ Surface MountD2PAKTO-263-3, D²Pak 2 Leads + Tab , TO-263AB
ZXMN10A25GTA
ZXMN10A25GTA
1000+0.531177
2000+0.495765
5000+0.47098
10000+0.453275
Increments of 1000
6363R4-40N-E8MOSFET N-CH 100V 2.9A SOT223Tape & Reel TR -ActiveN-ChannelMOSFET Metal Oxide 100V2.9A Ta 10V4V @ 250µA17nC @ 10V859pF @ 50V±20V-2W Ta 125 mOhm @ 2.9A, 10V-55°C ~ 150°C TJ Surface MountSOT-223TO-261-4, TO-261AA
2N6788
2N6788
Leadtime
2-3 weeks		U74W-BRJB-X3XMOSFET N-CH 100V TO-205AFBulk-ObsoleteN-ChannelMOSFET Metal Oxide 100V6A Tc -4V @ 250µA18nC @ 10V---800mW Tc 300 mOhm @ 3.5A, 10V-55°C ~ 150°C TJ Through HoleTO-39TO-205AF Metal Can
IXFN44N50Q
IXFN44N50Q
10+22.6627
Increments of 10
744744-KD-23MMOSFET N-CH 500V 44A SOT-227BTubeHiPerFET™ActiveN-ChannelMOSFET Metal Oxide 500V44A-4V @ 4mA190nC @ 10V7000pF @ 25V--500W Tc 120 mOhm @ 500mA, 10V-55°C ~ 150°C TJ Chassis MountSOT-227BSOT-227-4, miniBLOC
SIA467EDJ-T1-GE3-Cut
SIA467EDJ-T1-GE3
1+0.647059
10+0.556863
25+0.519608
100+0.415588
250+0.385961
Increments of 1
Leadtime
2-3 weeks		UZRDR-R45-XHMOSFET P-CH 12V 31A SC70-6Cut Tape CT TrenchFET®ActiveP-ChannelMOSFET Metal Oxide 12V31A Tc 1.8V, 4.5V1V @ 250µA72nC @ 8V2520pF @ 6V±8V-3.5W Ta , 19W Tc 13 mOhm @ 5A, 4.5V-50°C ~ 150°C TJ Surface MountPowerPAK® SC-70-6 SinglePowerPAK® SC-70-6
SQ3425EV-T1_GE3-Cut
SQ3425EV-T1_GE3
1+0.666667
10+0.572549
25+0.53451
100+0.427549
250+0.39698
Increments of 1
Leadtime
2-3 weeks		G0TGP-NRJE-J9MOSFET P-CHAN 20V TSOP-6Cut Tape CT Automotive, AEC-Q101, TrenchFET®ActiveP-ChannelMOSFET Metal Oxide 20V7.4A Tc 2.5V, 4.5V1.4V @ 250µA10.3nC @ 4.5V840pF @ 10V±12V-5W Tc 60 mOhm @ 4.7A, 4.5V-55°C ~ 175°C TJ Surface Mount6-TSOPSOT-23-6 Thin, TSOT-23-6
JANTXV2N6790
JANTXV2N6790
Leadtime
2-3 weeks		RMDB-BUD0-MRMOSFET N-CHBulkMilitary, MIL-PRF-19500 555ObsoleteN-ChannelMOSFET Metal Oxide 200V3.5A Tc -4V @ 250µA14.3nC @ 10V---800mW Tc 850 mOhm @ 3.5A, 10V-55°C ~ 150°C TJ Through HoleTO-205AF TO-39 TO-205AF Metal Can
AON7764-Cut
AON7764
33U-A1US-RXMOSFET N-CH 30V 32A 8DFNCut Tape CT AlphaMOSLast Time BuyN-ChannelMOSFET Metal Oxide 30V30A Ta , 32A Tc -2.2V @ 250µA40nC @ 10V1990pF @ 15V--4.2W Ta , 30W Tc 3.2 mOhm @ 20A, 10V-55°C ~ 150°C TJ Surface Mount8-DFN-EP 3x3 8-PowerSMD, Flat Leads
STW30NM50N
STW30NM50N
600+5.50554
Increments of 600
Leadtime
2-3 weeks		NYD0-PUI-1FVMOSFET N-CH 500V 27A TO-247TubeMDmesh™ IIObsoleteN-ChannelMOSFET Metal Oxide 500V27A Tc -4V @ 250µA94nC @ 10V2740pF @ 50V--190W Tc 115 mOhm @ 13.5A, 10V150°C TJ Through HoleTO-247-3TO-247-3
IPB50N10S3L-16-Cut
IPB50N10S3L-16
1+1.39216
10+1.2402
100+0.966961
500+0.798784
Increments of 1
Leadtime
2-3 weeks		IA-501P-K4YMOSFET N-CH 100V 50A TO263-3Cut Tape CT OptiMOS™ActiveN-ChannelMOSFET Metal Oxide 100V50A Tc 4.5V, 10V2.4V @ 60µA64nC @ 10V4180pF @ 25V±20V-100W Tc 15.4 mOhm @ 50A, 10V-55°C ~ 175°C TJ Surface MountPG-TO263-3-2TO-263-3, D²Pak 2 Leads + Tab , TO-263AB
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