ManufacturerSeriesPart StatusIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVce(on) (Max) @ Vge, IcCurrent - Collector Cutoff (Max)Input Capacitance (Cies) @ VceInputNTC ThermistorOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Series
Part Status
IGBT Type
Configuration
Voltage - Collector ...
Current - Collector ...
Power - Max
Vce(on) (Max) @ Vge, ...
Current - Collector ...
Input Capacitance ...
Input
NTC Thermistor
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
QID1210007
QID1210007
Leadtime
2-3 weeks
Powerex Inc.MOD IGBT 1200V 100A-Active-2 Independent1200V100A730W6.5V @ 15V, 100A1mA16nF @ 10VStandardNo-40°C ~ 150°C (TJ)---
QID1210006
QID1210006
Leadtime
2-3 weeks
Powerex Inc.MOD IGBT 1200V 100A SPLIT SI/SIC-Active-2 Independent1200V100A570W6.5V @ 15V, 100A1mA16nF @ 10VStandardNo-40°C ~ 150°C (TJ)---
QID1210005
QID1210005
Leadtime
2-3 weeks
Powerex Inc.MOD IGBT 1200V 100A SPLIT SI/SIC-Active-2 Independent1200V100A730W6.5V @ 15V, 100A1mA16nF @ 10VStandardNo-40°C ~ 150°C (TJ)---
VS-70MT060WSP
VS-70MT060WSP
105+54.5293
Increments of 105
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 96A 378W MTP-Active-Single600V96A378W2.15V @ 15V, 40A100µA7.43nF @ 30VSingle Phase Bridge RectifierYes150°C (TJ)Chassis Mount12-MTP ModuleMTP
VS-70MT060WHTAPBF
VS-70MT060WHTAPBF
105+56.6535
Increments of 105
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 100A 347W MTP-ActiveNPTHalf Bridge600V100A347W3.4V @ 15V, 140A700µA8nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount12-MTP ModuleMTP
VS-50MT060WHTAPBF
VS-50MT060WHTAPBF
1+56.6176
10+53.1863
25+51.4706
100+47.6961
Increments of 1
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 114A 658W MTP-Active-Half Bridge600V114A658W3.2V @ 15V, 100A400µA7.1nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount12-MTP ModuleMTP
VS-40MT120UHTAPBF
VS-40MT120UHTAPBF
105+87.2831
Increments of 105
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 80A 463W MTP-ActiveNPTHalf Bridge1200V80A463W4.91V @ 15V, 80A250µA8.28nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount12-MTP ModuleMTP
VS-40MT120UHAPBF
VS-40MT120UHAPBF
1+101.725
10+96.4706
25+93.8459
100+87.283
Increments of 1
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 80A 463W MTP-ActiveNPTHalf Bridge1200V80A463W4.91V @ 15V, 80A250µA8.28nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount12-MTP ModuleMTP
VS-25MT060WFAPBF
VS-25MT060WFAPBF
105+51.103
Increments of 105
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 69A 195W MTP-Active-Full Bridge Inverter600V69A195W3.25V @ 15V, 50A250µA5.42nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount16-MTP ModuleMTP
VS-20MT120UFP
VS-20MT120UFP
105+54.1075
Increments of 105
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 40A 240W MTP-ActiveNPTFull Bridge Inverter1200V40A240W4.66V @ 15V, 40A250µA3.79nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount16-MTP ModuleMTP
VS-20MT120UFAPBF
VS-20MT120UFAPBF
105+54.1075
Increments of 105
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 20A 240W MTP-ActiveNPTFull Bridge Inverter1200V20A240W4.66V @ 15V, 40A250µA3.79nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis Mount16-MTP ModuleMTP
VS-20MT050XC
VS-20MT050XC
105+111.3
Increments of 105
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionMOD IGBT 20A 500V MTP-Active---------No----
VS-100MT060WDF
VS-100MT060WDF
105+60.8746
Increments of 105
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 121A 462W MTP-Active--600V121A462W2.29V @ 15V, 60A100µA9.5nF @ 30VStandardYes150°C (TJ)Chassis Mount16-MTP ModuleMTP
VS-GT75NP120N
VS-GT75NP120N
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 150A 446W INT-A-PAK-Obsolete-Single1200V150A446W2.08V @ 15V, 75A (Typ)1mA9.45nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis MountINT-A-PAK (3 + 4)INT-A-PAK
VS-GT50TP60N
VS-GT50TP60N
24+140.463
Increments of 24
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 85A 208W INT-A-PAK-ActiveTrenchHalf Bridge600V85A208W2.1V @ 15V, 50A1mA3.03nF @ 30VStandardNo175°C (TJ)Chassis MountINT-A-PAK (3 + 4)INT-A-PAK
VS-GT50TP120N
VS-GT50TP120N
24+68.2745
Increments of 24
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 100A 405W INT-A-PAK-ActiveTrenchHalf Bridge1200V100A405W2.35V @ 15V, 50A5mA6.24nF @ 30VStandardNo175°C (TJ)Chassis MountINT-A-PAK (3 + 4)INT-A-PAK
VS-GT400TH60N
VS-GT400TH60N
12+439.721
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 530A 1600W DIAP-ActiveTrenchHalf Bridge600V530A1600W2.05V @ 15V, 400A5mA30.8nF @ 30VStandardNo175°C (TJ)Chassis MountDouble INT-A-PAK (3 + 8)Double INT-A-PAK
VS-GT400TH120U
VS-GT400TH120U
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 750A 2344W DIAP-ObsoleteTrenchHalf Bridge1200V750A2344W2.35V @ 15V, 400A5mA51.2nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 8)Double INT-A-PAK
VS-GT400TH120N
VS-GT400TH120N
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 600A 2119W DIAP-ObsoleteTrenchHalf Bridge1200V600A2119W2.15V @ 15V, 400A5mA28.8nF @ 25VStandardNo150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 8)Double INT-A-PAK
VS-GT300YH120N
VS-GT300YH120N
12+168.1
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 341A 1042W DIAP-ActiveTrenchHalf Bridge1200V341A1042W2.17V @ 15V, 300A (Typ)300µA36nF @ 30VStandardNo-40°C ~ 150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 8)Double INT-A-PAK
VS-GT300FD060N
VS-GT300FD060N
12+513.965
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 379A 1250W DIAP-ActiveTrench Field StopThree Level Inverter600V379A1250W2.5V @ 15V, 300A250µA23.3nF @ 30VStandardNo175°C (TJ)Chassis MountDual INT-A-PAK (4 + 8)Dual INT-A-PAK
VS-GT175DA120U
VS-GT175DA120U
1+106.99
10+101.47
25+98.709
100+91.8061
Increments of 1
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 288A 1087W SOT-227-ActiveTrenchSingle1200V288A1087W2.1V @ 15V, 100A100µA-StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
VS-GT140DA60U
VS-GT140DA60U
160+53.0286
Increments of 160
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 200A 652W SOT-227-ActiveTrenchSingle600V200A652W2V @ 15V, 100A100µA-StandardNo-40°C ~ 175°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
VS-GT100TP60N
VS-GT100TP60N
24+175.511
Increments of 24
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 160A 417W INT-A-PAK-ActiveTrenchHalf Bridge600V160A417W2.1V @ 15V, 100A5mA7.71nF @ 30VStandardNo175°C (TJ)Chassis MountINT-A-PAK (3 + 4)INT-A-PAK
VS-GT100TP120N
VS-GT100TP120N
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 180A 652W INT-A-PAK-ObsoleteTrenchHalf Bridge1200V180A652W2.35V @ 15V, 100A5mA12.8nF @ 30VStandardNo175°C (TJ)Chassis MountINT-A-PAK (3 + 4)INT-A-PAK