ManufacturerSeriesPart StatusIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVce(on) (Max) @ Vge, IcCurrent - Collector Cutoff (Max)Input Capacitance (Cies) @ VceInputNTC ThermistorOperating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Series
Part Status
IGBT Type
Configuration
Voltage - Collector ...
Current - Collector ...
Power - Max
Vce(on) (Max) @ Vge, ...
Current - Collector ...
Input Capacitance ...
Input
NTC Thermistor
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
VS-GB300TH120N
VS-GB300TH120N
12+563.573
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 500A 1645W INT-A-PAK-Active-Half Bridge1200V500A1645W2.45V @ 15V, 300A5mA21.2nF @ 25VStandardNo150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB300NH120N
VS-GB300NH120N
12+155.235
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 500A 1645W INT-A-PAK-Active-Single1200V500A1645W2.45V @ 15V, 300A5mA21.2nF @ 25VStandardNo150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB300LH120N
VS-GB300LH120N
12+155.235
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 500A 1645W INT-A-PAK-Active-Single1200V500A1645W2V @ 15V, 300A (Typ)5mA21.2nF @ 25VStandardNo150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB300AH120N
VS-GB300AH120N
12+362.936
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 620A 2500W INT-A-PAK-Active-Single1200V620A2500W1.9V @ 15V, 300A (Typ)5mA21nF @ 25VStandardNo-40°C ~ 150°C (TJ)Chassis MountDouble INT-A-PAK (5)Double INT-A-PAK
VS-GB200TS60NPBF
VS-GB200TS60NPBF
15+125.642
Increments of 15
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 209A 781W INT-A-PAK-ActiveNPTHalf Bridge600V209A781W2.84V @ 15V, 200A200µA-StandardNo-40°C ~ 150°C (TJ)Chassis MountINT-A-PAK (3 + 4)INT-A-PAK
VS-GB200TH120U
VS-GB200TH120U
12+425.99
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 330A 1316W INT-A-PAK-Active-Half Bridge1200V330A1316W3.6V @ 15V, 200A5mA16.9nF @ 30VStandardNo150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB200TH120N
VS-GB200TH120N
12+425.99
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 360A 1136W INT-A-PAK-Active-Half Bridge1200V360A1136W2.35V @ 15V, 200A5mA14.9nF @ 25VStandardNo150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB200NH120N
VS-GB200NH120N
12+346.946
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 420A 1562W INT-A-PAK-Active-Single1200V420A1562W1.8V @ 15V, 200A (Typ)5mA18nF @ 25VStandardNo-40°C ~ 150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB200LH120N
VS-GB200LH120N
12+346.946
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 370A 1562W INT-A-PAK-Active-Single1200V370A1562W2.07V @ 15V, 200A (Typ)100nA18nF @ 25VStandardNo-40°C ~ 150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB15XP120KTPBF
VS-GB15XP120KTPBF
105+45.5975
Increments of 105
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 30A 187W MTP-ActiveNPTThree Phase Inverter1200V30A187W3.66V @ 15V, 30A250µA1.95nF @ 30VStandardYes-40°C ~ 150°C (TJ)Chassis Mount12-MTP ModuleMTP
VS-GB150TS60NPBF
VS-GB150TS60NPBF
15+82.049
Increments of 15
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 138A 500W INT-A-PAK-ActiveNPTHalf Bridge600V138A500W3V @ 15V, 150A200µA-StandardNo150°C (TJ)Chassis MountINT-A-PAK (3 + 4)INT-A-PAK
VS-GB150TH120U
VS-GB150TH120U
12+131.041
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 280A 1147W INT-A-PAK-Active-Half Bridge1200V280A1147W3.6V @ 15V, 150A5mA12.7nF @ 30VStandardNo150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB150TH120N
VS-GB150TH120N
12+351.554
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 300A 1008W INT-A-PAK-Active-Half Bridge1200V300A1008W2.35V @ 15V, 150A5mA11nF @ 25VStandardNo150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB150LH120N
VS-GB150LH120N
12+113.935
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 300A 1389W INT-A-PAK-Active-Single1200V300A1389W1.87V @ 15V, 150A (Typ)1mA10.6nF @ 25VStandardNo-40°C ~ 150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB100TS60NPBF
VS-GB100TS60NPBF
15+86.5928
Increments of 15
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 108A 390W INT-A-PAK-ActiveNPTHalf Bridge600V108A390W2.85V @ 15V, 100A100µA-StandardNo-40°C ~ 150°C (TJ)Chassis MountINT-A-PakINT-A-PAK
VS-GB100TP120U
VS-GB100TP120U
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 150A 735W INT-A-PAK-Obsolete-Half Bridge1200V150A735W3.9V @ 15V, 100A2mA4.3nF @ 25VStandardNo-Chassis MountINT-A-PakINT-A-PAK
VS-GB100TP120N
VS-GB100TP120N
24+86.0739
Increments of 24
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 200A 650W INT-A-PAK-Active-Half Bridge1200V200A650W2.2V @ 15V, 100A5mA7.43nF @ 25VStandardNo150°C (TJ)Chassis MountINT-A-PakINT-A-PAK
VS-GB100TH120U
VS-GB100TH120U
12+322.827
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 200A 1136W INT-A-PAK-ActiveNPTHalf Bridge1200V200A1136W3.6V @ 15V, 100A5mA8.45nF @ 20VStandardNo-40°C ~ 150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB100TH120N
VS-GB100TH120N
12+322.827
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 200A 833W INT-A-PAK-Active-Half Bridge1200V200A833W2.35V @ 15V, 100A5mA8.58nF @ 25VStandardNo150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB100NH120N
VS-GB100NH120N
12+272.725
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 200A 833W INT-A-PAK-Active-Single1200V200A833W2.35V @ 15V, 100A5mA8.58nF @ 25VStandardNo150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB100LP120N
VS-GB100LP120N
24+72.8848
Increments of 24
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 200A 658W INT-A-PAK-Active-Single1200V200A658W1.8V @ 15V, 100A (Typ)1mA7.43nF @ 25VStandardNo-40°C ~ 150°C (TJ)Chassis MountINT-A-PakINT-A-PAK
VS-GB100LH120N
VS-GB100LH120N
12+273.963
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 1200V 200A 833W INT-A-PAK-Active-Single1200V200A833W1.77V @ 15V, 100A (Typ)1mA8.96nF @ 25VStandardNo-40°C ~ 150°C (TJ)Chassis MountDouble INT-A-PAK (3 + 4)Double INT-A-PAK
VS-GB100DA60UP
VS-GB100DA60UP
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionMODULE IGBT SOT-227-Obsolete-Single600V125A447W2.8V @ 15V, 100A100µA-StandardNo-40°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
VS-GB05XP120KTPBF
VS-GB05XP120KTPBF
105+30.976
Increments of 105
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionMODULE MTP SWITCH-Active-Three Phase Inverter1200V12A76W-250µA-StandardYes-40°C ~ 150°C (TJ)Chassis Mount12-MTP ModuleMTP
VS-GA400TD60S
VS-GA400TD60S
12+179.858
Increments of 12
Leadtime
2-3 weeks
Vishay Semiconductor Diodes DivisionIGBT 600V 750A 1563W INT-A-PAK-Active-Half Bridge600V750A1563W1.52V @ 15V, 400A1mA-StandardNo-40°C ~ 150°C (TJ)Chassis MountDual INT-A-PAK (3 + 8)Dual INT-A-PAK