ManufacturerPackagingSeriesPart StatusIGBT TypeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Current - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Operating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
IGBT Type
Voltage - Collector ...
Current - Collector ...
Current - Collector ...
Vce(on) (Max) @ Vge, ...
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C ...
Test Condition
Reverse Recovery ...
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
IRG7PH42UD-EP
IRG7PH42UD-EP
1+10.3725
10+9.37059
100+7.75833
500+6.75588
1000+5.88415
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIGBT 1200V 85A 320W TO247ADTube-ActiveTrench1200V85A90A2V @ 15V, 30A320W2.11mJ (on), 1.18mJ (off)Standard157nC25ns/229ns600V, 30A, 10 Ohm, 15V153ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247AD
IRG6I330UPBF
IRG6I330UPBF
Leadtime
2-3 weeks		Infineon TechnologiesIGBT 330V 28A 43W TO220ABFPTube-ObsoleteTrench330V28A-1.55V @ 15V, 28A43W-Standard86nC39ns/120ns196V, 25A, 10 Ohm--40°C ~ 150°C (TJ)Through HoleTO-220-3 Full PackTO-220AB Full-Pak
IRG6I320UPBF
IRG6I320UPBF
Leadtime
2-3 weeks		Infineon TechnologiesIGBT 330V 24A 39W TO220ABFPTube-ObsoleteTrench330V24A-1.65V @ 15V, 24A39W-Standard46nC24ns/89ns196V, 12A, 10 Ohm--40°C ~ 150°C (TJ)Through HoleTO-220-3TO-220AB
IRG4PH50S-EPBF
IRG4PH50S-EPBF
1+5.53922
10+4.97255
100+4.07431
500+3.46843
1000+2.92518
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIGBT 1200V 57A 200W TO247ADTube-Active-1200V57A114A1.7V @ 15V, 33A200W1.8mJ (on), 19.6mJ (off)Standard167nC32ns/845ns960V, 33A, 5 Ohm, 15V--55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247AD
IRG4PC50FD-EPBF
IRG4PC50FD-EPBF
1+6.7549
10+6.10294
100+5.05275
500+4.39988
1000+3.83215
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIGBT 600V 70A 200W TO247ADTube-Active-600V70A280A1.6V @ 15V, 39A200W1.5mJ (on), 2.4mJ (off)Standard190nC55ns/240ns480V, 39A, 5 Ohm, 15V50ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247AC
IRG6I330U-168P
IRG6I330U-168P
Leadtime
2-3 weeks		Infineon TechnologiesIGBT 330V 28A 43W TO220ABFPTube-Obsolete-330V28A-1.55V @ 15V, 28A43W-Standard-----Through HoleTO-220-3TO-220AB
IRG6I330U-111P
IRG6I330U-111P
Leadtime
2-3 weeks		Infineon TechnologiesIGBT 330V 28A 43W TO220ABFPTube-Obsolete-330V28A-1.55V @ 15V, 28A43W-Standard-39ns/120ns---Through HoleTO-220-3TO-220AB
IRG6I330U-110P
IRG6I330U-110P
Leadtime
2-3 weeks		Infineon TechnologiesIGBT 330V 28A 43W TO220ABFPTube-Obsolete-330V28A-1.55V @ 15V, 28A43W-Standard-39ns/120ns---Through HoleTO-220-3TO-220AB
STGDL6NC60DIT4-Cut
STGDL6NC60DIT4
1+1.68627
10+1.51765
100+1.21951
500+1.00198
1000+0.830206
Increments of 1
Leadtime
2-3 weeks		STMicroelectronicsIGBT 600V 13A 50W DPAKCut Tape (CT)PowerMESH™Obsolete-600V13A18A2.9V @ 15V, 3A50W32µJ (on), 24µJ (off)Standard12nC6.7ns/46ns390V, 3A, 10 Ohm, 15V23ns-55°C ~ 150°C (TJ)Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-Pak
STGP14N60D
STGP14N60D
Leadtime
2-3 weeks		STMicroelectronicsIGBT 600V 25A 95W TO220TubePowerMESH™Obsolete-600V25A50A2.1V @ 15V, 7A95W-Standard--390V, 7A, 10 Ohm, 15V37ns-Through HoleTO-220-3TO-220-3
STGF14N60D
STGF14N60D
Leadtime
2-3 weeks		STMicroelectronicsIGBT 600V 11A 33W TO220FPTubePowerMESH™Obsolete-600V11A50A2.1V @ 15V, 7A33W-Standard--390V, 7A, 10 Ohm, 15V37ns-Through HoleTO-220-3 Full PackTO-220FP
STGDL6NC60DIT4
STGDL6NC60DIT4
2500+0.750441
5000+0.722647
Increments of 2500
Leadtime
2-3 weeks		STMicroelectronicsIGBT 600V 13A 50W DPAKTape & Reel (TR)PowerMESH™Obsolete-600V13A18A2.9V @ 15V, 3A50W32µJ (on), 24µJ (off)Standard12nC6.7ns/46ns390V, 3A, 10 Ohm, 15V23ns-55°C ~ 150°C (TJ)Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63D-Pak
GT50J121(Q)
GT50J121(Q)
Leadtime
2-3 weeks		Toshiba Semiconductor and StorageIGBT 600V 50A 240W TO3P LHTube-Obsolete-600V50A100A2.45V @ 15V, 50A240W1.3mJ (on), 1.34mJ (off)Standard-90ns/300ns300V, 50A, 13 Ohm, 15V-150°C (TJ)Through HoleTO-3PLTO-3P(LH)
GT8G133(TE12L,Q)
GT8G133(TE12L,Q)
Leadtime
2-3 weeks		Toshiba Semiconductor and StorageIGBT 400V 600MW 8TSSOPTape & Reel (TR)-Obsolete-400V-150A2.9V @ 4V, 150A600mW-Standard-1.7µs/2µs--150°C (TJ)Surface Mount8-TSSOP (0.173", 4.40mm Width)8-TSSOP
GT60N321(Q)
GT60N321(Q)
Leadtime
2-3 weeks		Toshiba Semiconductor and StorageIGBT 1000V 60A 170W TO3P LHTube-Obsolete-1000V60A120A2.8V @ 15V, 60A170W-Standard-330ns/700ns-2.5µs150°C (TJ)Through HoleTO-3PLTO-3P(LH)
GT10J312(Q)
GT10J312(Q)
Leadtime
2-3 weeks		Toshiba Semiconductor and StorageIGBT 600V 10A 60W TO220SMTube-Obsolete-600V10A20A2.7V @ 15V, 10A60W-Standard-400ns/400ns300V, 10A, 100 Ohm, 15V200ns150°C (TJ)Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-220SM
GT10G131(TE12L,Q)
GT10G131(TE12L,Q)
Leadtime
2-3 weeks		Toshiba Semiconductor and StorageIGBT 400V 1W 8-SOICTape & Reel (TR)-Obsolete-400V-200A2.3V @ 4V, 200A1W-Standard-3.1µs/2µs--150°C (TJ)Surface Mount8-SOIC (0.173", 4.40mm Width)8-SOP (5.5x6.0)
FGH40N65UFDTU
FGH40N65UFDTU
1+4.42157
10+3.96667
100+3.25
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorIGBT 650V 80A 290W TO247Tube-ActiveField Stop650V80A120A2.4V @ 15V, 40A290W1.19mJ (on), 460µJ (off)Standard120nC24ns/112ns400V, 40A, 10 Ohm, 15V45ns-55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
FGI3236_F085
FGI3236_F085
1+2.22549
10+1.99706
100+1.60539
500+1.31902
1000+1.0929
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorIGBT 360V 44A 187W I2PAKTubeAutomotive, AEC-Q101, EcoSPARK®Active-360V44A-1.4V @ 4V, 6A187W-Logic20nC-/5.4µs300V, 1 kOhm, 5V--40°C ~ 175°C (TJ)Through HoleTO-262-3 Long Leads, I²Pak, TO-262AATO-262
FGH40N60SFTU
FGH40N60SFTU
1+4.2451
10+3.81373
100+3.12461
500+2.6599
1000+2.24329
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorIGBT 600V 80A 290W TO247Tube-ActiveField Stop600V80A120A2.9V @ 15V, 40A290W1.13mJ (on), 310µJ (off)Standard120nC25ns/115ns400V, 40A, 10 Ohm, 15V--55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
FGA60N60UFDTU
FGA60N60UFDTU
1+5.83333
10+5.26961
100+4.36274
500+3.79902
1000+3.30882
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorIGBT 600V 120A 298W TO3PTube-ActiveField Stop600V120A180A2.4V @ 15V, 60A298W1.81mJ (on), 810µJ (off)Standard188nC23ns/130ns400V, 60A, 5 Ohm, 15V47ns-55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3P
FGA50N100BNTTU
FGA50N100BNTTU
Leadtime
2-3 weeks		Fairchild/ON SemiconductorIGBT 1000V 50A 156W TO3PTube-ObsoleteNPT and Trench1000V50A200A2.9V @ 15V, 60A156W-Standard257nC34ns/243ns600V, 60A, 10 Ohm, 15V--55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3PN
FGA50N100BNTD2
FGA50N100BNTD2
1+6.90196
10+6.23529
100+5.16196
Increments of 1
Leadtime
2-3 weeks		Fairchild/ON SemiconductorIGBT 1000V 50A 156W TO3PTube-ActiveNPT and Trench1000V50A200A2.9V @ 15V, 60A156W-Standard257nC34ns/243ns600V, 60A, 10 Ohm, 15V75ns-55°C ~ 150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3P
APT80GA90B
APT80GA90B
1+11.2157
10+10.199
25+9.43412
100+8.66922
250+7.90423
Increments of 1
Leadtime
2-3 weeks		Microsemi CorporationIGBT 900V 145A 625W TO247Tube-ActivePT900V145A239A3.1V @ 15V, 47A625W1652µJ (on), 1389µJ (off)Standard200nC18ns/149ns600V, 47A, 4.7 Ohm, 15V--55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]
APT80GA60B
APT80GA60B
1+11.4118
10+10.2706
25+9.35804
100+8.4449
250+7.76016
Increments of 1
Leadtime
2-3 weeks		Microsemi CorporationIGBT 600V 143A 625W TO247Tube-ActivePT600V143A240A2.5V @ 15V, 47A625W840µJ (on), 751µJ (off)Standard230nC23ns/158ns400V, 47A, 4.7 Ohm, 15V--55°C ~ 150°C (TJ)Through HoleTO-247-3TO-247 [B]