ManufacturerPackagingSeriesPart StatusDriven ConfigurationChannel TypeNumber of DriversGate TypeVoltage - SupplyLogic Voltage - VIL, VIHCurrent - Peak Output (Source, Sink)Input TypeHigh Side Voltage - Max (Bootstrap)Rise / Fall Time (Typ)Operating TemperatureMounting TypePackage / CaseSupplier Device Package
Supplier Part Number
Manufacturer Part Number
PriceStock
Manufacturer
Description
Packaging
Series
Part Status
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, ...
Current - Peak Output ...
Input Type
High Side Voltage ...
Rise / Fall Time ...
Operating Temperature ...
Mounting Type
Package / Case
Supplier Device Package ...
IR21844SPBF
IR21844SPBF
1+3.48039
10+3.12647
100+2.56176
500+2.18078
1000+1.83922
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HIGH/LOW SIDE 14SOICTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.7V1.9A, 2.3ANon-Inverting600V40ns, 20ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOIC
IR21094SPBF
IR21094SPBF
1+2.60784
10+2.34314
100+1.88363
500+1.54755
1000+1.28225
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HALF BRIDGE 14SOICTube-ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.9V200mA, 350mANon-Inverting600V150ns, 50ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOIC
IR2121PBF
IR2121PBF
1+6.12745
10+5.50294
100+4.50833
500+3.83786
1000+3.23675
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC MOSFET DRIVER LOW SIDE 8DIPTube-ActiveLow-SideSingle1IGBT, N-Channel MOSFET12 V ~ 18 V0.8V, 2.2V1.6A, 3.3ANon-Inverting-43ns, 26ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2128PBF
IR2128PBF
17000+1.30528
Increments of 17000
Leadtime
2-3 weeks		Infineon TechnologiesIC MOSFET DRVR CURR SENSE 8DIPTube-ActiveHigh-Side or Low-SideSingle1IGBT, N-Channel MOSFET12 V ~ 20 V0.8V, 3V250mA, 500mAInverting600V80ns, 40ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2184PBF
IR2184PBF
1+3.03922
10+2.73039
100+2.23676
500+1.90412
1000+1.60588
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HIGH/LOW SIDE 8DIPTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.7V1.9A, 2.3ANon-Inverting600V40ns, 20ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2183PBF
IR2183PBF
1+3.44118
10+3.09118
100+2.53235
500+2.15573
1000+1.81808
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HALF BRIDGE 8DIPTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.7V1.9A, 2.3AInverting, Non-Inverting600V40ns, 20ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2181PBF
IR2181PBF
1+3.11765
10+2.79804
100+2.29225
500+1.95131
1000+1.64569
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HIGH/LOW SIDE 8DIPTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.7V1.9A, 2.3ANon-Inverting600V40ns, 20ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2109PBF
IR2109PBF
1+2.7451
10+2.46373
100+2.01882
500+1.71859
1000+1.44941
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HALF BRIDGE 8DIPTube-ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.9V200mA, 350mANon-Inverting600V150ns, 50ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2108PBF
IR2108PBF
1+2.86275
10+2.57255
100+2.06735
500+1.69853
1000+1.40735
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HALF BRIDGE 8DIPTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.9V200mA, 350mANon-Inverting600V150ns, 50ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2106PBF
IR2106PBF
1+2.06863
10+1.85784
100+1.49314
500+1.22673
1000+1.01642
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HIGH/LOW SIDE 8DIPTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.9V200mA, 350mANon-Inverting600V150ns, 50ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2153PBF
IR2153PBF
1+1.4902
10+1.33333
100+1.03951
500+0.858725
1000+0.677941
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HALF BRIDGE OSC 8DIPTube-Not For New DesignsHalf-BridgeSynchronous2N-Channel MOSFET10 V ~ 15.6 V--RC Input Circuit600V80ns, 45ns-40°C ~ 125°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2104PBF
IR2104PBF
1+2.35294
10+2.11471
100+1.6998
500+1.39657
1000+1.15716
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HIGH/LOW SIDE 8DIPTube-ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 3V210mA, 360mANon-Inverting600V100ns, 50ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2101PBF
IR2101PBF
1+2.06863
10+1.85784
100+1.49314
500+1.22673
1000+1.01642
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HIGH/LOW SIDE 8DIPTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 3V210mA, 360mANon-Inverting600V100ns, 50ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2103PBF
IR2103PBF
1+1.7451
10+1.57157
100+1.26343
500+1.038
1000+0.860049
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HALF BRIDGE 600V 8DIPTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 3V210mA, 360mAInverting, Non-Inverting600V100ns, 50ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2302PBF
IR2302PBF
1+2.87255
10+2.57549
100+2.11039
500+1.79655
1000+1.51516
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HALF BRIDGE 8DIPTube-ActiveHalf-BridgeSynchronous2IGBT, N-Channel MOSFET5 V ~ 20 V0.8V, 2.9V200mA, 350mANon-Inverting600V130ns, 50ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2301PBF
IR2301PBF
1+2.86275
10+2.56667
100+2.10294
500+1.7902
1000+1.5098
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HIGH/LOW SIDE 8DIPTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET5 V ~ 20 V0.8V, 2.9V200mA, 350mANon-Inverting600V130ns, 50ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR4427PBF
IR4427PBF
1+1.45098
10+1.29902
100+1.04412
500+0.857843
1000+0.710784
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER DUAL LOW SIDE 8DIPTube-ActiveLow-SideIndependent2IGBT, N-Channel MOSFET6 V ~ 20 V0.8V, 2.7V2.3A, 3.3ANon-Inverting-15ns, 10ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-DIP
IR2213SPBF
IR2213SPBF
1+7.08824
10+6.39902
100+5.29814
500+4.61353
1000+4.01824
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HIGH/LOW SIDE 16SOICTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET12 V ~ 20 V6V, 9.5V2A, 2.5ANon-Inverting1200V25ns, 17ns-55°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
IR2130JPBF
IR2130JPBF
1+11.598
10+10.4804
100+8.67667
500+7.55549
1000+6.58059
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER BRIDGE 3PHASE 44PLCCTube-ActiveHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.2V250mA, 500mAInverting600V80ns, 35ns-40°C ~ 150°C (TJ)Surface Mount44-LCC (J-Lead), 32 Leads44-PLCC, 32 Leads (16.58x16.58)
IR2133SPBF
IR2133SPBF
1+6.42157
10+5.79706
100+4.79902
500+4.17892
1000+3.63971
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER BRIDGE 3PHASE 28SOICTube-ActiveHalf-Bridge3-Phase6IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.2V250mA, 500mAInverting600V90ns, 40ns125°C (TJ)Surface Mount28-SOIC (0.295", 7.50mm Width)28-SOIC
IR2110PBF
IR2110PBF
1+2.86275
10+2.56667
100+2.10294
500+1.7902
1000+1.5098
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HIGH/LOW SIDE 14DIPTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET3.3 V ~ 20 V6V, 9.5V2A, 2ANon-Inverting500V25ns, 17ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
IR21814PBF
IR21814PBF
1+3.40196
10+3.05392
100+2.50255
500+2.13033
1000+1.79667
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HIGH/LOW SIDE 14DIPTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.7V1.9A, 2.3ANon-Inverting600V40ns, 20ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
IR21064PBF
IR21064PBF
1+2.86275
10+2.56667
100+2.10294
500+1.7902
1000+1.5098
Increments of 1
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HIGH/LOW SIDE 14DIPTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.9V200mA, 350mANon-Inverting600V150ns, 50ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
IR21084PBF
IR21084PBF
225+2.2712
Increments of 225
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER HALF BRIDGE 14DIPTube-ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.9V200mA, 350mANon-Inverting600V150ns, 50ns-40°C ~ 150°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-DIP
IR2127STRPBF
IR2127STRPBF
2500+0.807353
5000+0.777451
12500+0.747549
Increments of 2500
Leadtime
2-3 weeks		Infineon TechnologiesIC DRIVER CURR SENSE 1CHAN 8SOICTape & Reel (TR)-ActiveHigh-Side or Low-SideSingle1IGBT, N-Channel MOSFET12 V ~ 20 V0.8V, 3V250mA, 500mANon-Inverting600V80ns, 40ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC